Intel and Micron - through their joint venture company, IM Flash Technologies (IMFT) - has unveiled the new 20nm manufacturing process technology for NAND flash memory production. This new process technology produces an 8GB multi-level cell NAND device and offers 30 to 40-percent reduction in board space compared to the company’s existing 8GB 25nm NAND flash while maintaining similar level of performance and endurance.
Targeted for smartphones, tablets and computing devices such as solid-state drive, the size reduction will be able to provide extra space for manufacturers include more features into their devices such as bigger battery, larger screen or even another chip that can offers extra capabilities. The new 20nm 8GB NAND flash device from IMFT is already heading to manufacturers as samples and is expected to be mass produced in the second half of 2011.
At the same time, the venture is also planning to introduce 16GB NAND flash device which will enable manufacturers to come up with a single solid-state storage solution that is smaller than a U.S postage stamp and with capacity of up to 128GB.
[Source: Intel]
Article From: Lowyat
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